Infineon IPAN60R180CM8XKSA1

Infineon · FETs & Power MOSFETs · MPN IPAN60R180CM8XKSA1

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Specifications

Drain to Source Voltage600V
Gate Charge(Qg)17nC@10V
Current - Continuous Drain(Id)8A
Output Capacitance(Coss)11pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4.7V
Pd - Power Dissipation25W
RDS(on)180mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)743pF

Technical details

600V 8A 25W Through Hole TO-220FP

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