Infineon · FETs & Power MOSFETs · MPN IPAN60R125PFD7S
No reviews yet — be the first to review Infineon IPAN60R125PFD7S.
| Configuration | - |
|---|---|
| Gate Charge(Qg) | 36nC@10V |
| Drain to Source Voltage | 650V |
| Output Capacitance(Coss) | - |
| Current - Continuous Drain(Id) | 16A |
| Operating Temperature - | -40℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.5V |
| Pd - Power Dissipation | 32W |
| Reverse Transfer Capacitance (Crss@Vds) | 520pF |
| RDS(on) | 125mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.503nF |
650V 16A 4.5V 32W 125mΩ@10V 1 N-channel TO-220FP Single FETs, MOSFETs RoHS