Infineon IPA90R1K2C3

Infineon · FETs & Power MOSFETs · MPN IPA90R1K2C3

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Specifications

Configuration-
Gate Charge(Qg)28nC@10V
Drain to Source Voltage900V
Output Capacitance(Coss)35pF
Current - Continuous Drain(Id)5.1A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3.5V
Pd - Power Dissipation31W
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)1.2Ω@10V
Number1 N-channel
Input Capacitance(Ciss)710pF

Technical details

900V 5.1A 3.5V 31W 1.2Ω@10V 1 N-channel TO-220-FP Single FETs, MOSFETs RoHS

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