Infineon IPA90R1K0C3

Infineon · FETs & Power MOSFETs · MPN IPA90R1K0C3

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Specifications

Gate Charge(Qg)34nC@10V
Drain to Source Voltage900V
Current - Continuous Drain(Id)5.7A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation32W
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)780mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)850pF

Technical details

900V 5.7A 32W Through Hole TO-220FP

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