Infineon · FETs & Power MOSFETs · MPN IPA80R650CEXKSA2
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| Gate Charge(Qg) | 45nC@10V |
|---|---|
| Drain to Source Voltage | 800V |
| Current - Continuous Drain(Id) | 5.1A |
| Operating Temperature - | -40℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.9V |
| Pd - Power Dissipation | 33W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 1.5Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.1nF |
N-Channel 800V 5.1A 33W Through Hole TO-220FP