Infineon IPA80R600P7XKSA1

Infineon · FETs & Power MOSFETs · MPN IPA80R600P7XKSA1

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Specifications

Gate Charge(Qg)20nC@10V
Drain to Source Voltage800V
Current - Continuous Drain(Id)8A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation28W
Reverse Transfer Capacitance (Crss@Vds)11pF
RDS(on)600mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)570pF

Technical details

N-Channel 800V 8A 28W Through Hole TO-220FP-3

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