Infineon IPA80R1K4P7

Infineon · FETs & Power MOSFETs · MPN IPA80R1K4P7

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Specifications

Drain to Source Voltage800V
Gate Charge(Qg)10nC@10V
Output Capacitance(Coss)6.5pF
Current - Continuous Drain(Id)4A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation24W
Reverse Transfer Capacitance (Crss@Vds)6.5pF
RDS(on)1.4Ω@10V
Number1 N-channel
Input Capacitance(Ciss)250pF

Technical details

N-Channel 800V 4A 24W Through Hole TO-220-3-31

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