Infineon IPA80R1K4CEXKSA2

Infineon · FETs & Power MOSFETs · MPN IPA80R1K4CEXKSA2

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Specifications

Gate Charge(Qg)23nC@10V
Drain to Source Voltage800V
Output Capacitance(Coss)25pF
Current - Continuous Drain(Id)3.9A
Operating Temperature --40℃~+150℃
Gate Threshold Voltage (Vgs(th))3.9V
Pd - Power Dissipation31W
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)1.4Ω@10V
Number1 N-channel
Input Capacitance(Ciss)570pF

Technical details

N-Channel 800V 3.9A 31W Through Hole TO-220-FP

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