Infineon IPA80R1K0CE

Infineon · FETs & Power MOSFETs · MPN IPA80R1K0CE

No reviews yet — be the first to review Infineon IPA80R1K0CE.

Specifications

Gate Charge(Qg)31nC@10V
Drain to Source Voltage800V
Current - Continuous Drain(Id)3.6A
Operating Temperature --40℃~+150℃
Gate Threshold Voltage (Vgs(th))3.9V
Pd - Power Dissipation32W
RDS(on)2.19Ω@10V
Number1 N-channel
Input Capacitance(Ciss)785pF

Technical details

800V 3.6A 3.9V 32W 2.19Ω@10V 1 N-channel TO-220-3 Single FETs, MOSFETs RoHS

Related FETs & Power MOSFETs