Infineon IPA70R750P7S

Infineon · FETs & Power MOSFETs · MPN IPA70R750P7S

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Specifications

Gate Charge(Qg)8.3nC@10V
Drain to Source Voltage700V
Output Capacitance(Coss)5.1pF
Current - Continuous Drain(Id)6.5A
Operating Temperature --40℃~+150℃
Gate Threshold Voltage (Vgs(th))3.5V
Pd - Power Dissipation21.2W
RDS(on)750mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)306pF

Technical details

N-Channel 700V 6.5A 21.2W Through Hole TO-220FP-3

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