Infineon · FETs & Power MOSFETs · MPN IPA65R660CFD
No reviews yet — be the first to review Infineon IPA65R660CFD.
| Gate Charge(Qg) | 22nC@10V |
|---|---|
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 6A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 27.8W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 594mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 615pF |
N-Channel 650V 6A 27.8W Through Hole TO-220