Infineon · FETs & Power MOSFETs · MPN IPA65R280E6
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| Gate Charge(Qg) | - |
|---|---|
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 13.8A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 32W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 250mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 950pF |
650V 13.8A 3V 32W 250mΩ@10V 1 N-channel TO-220 Single FETs, MOSFETs RoHS