Infineon IPA65R1K0CE

Infineon · FETs & Power MOSFETs · MPN IPA65R1K0CE

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Specifications

Gate Charge(Qg)15.3nC@10V
Drain to Source Voltage-
Current - Continuous Drain(Id)7.2A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3.5V
Pd - Power Dissipation68W
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)1Ω@10V
Number1 N-channel
Input Capacitance(Ciss)328pF

Technical details

7.2A 3.5V 68W 1Ω@10V 1 N-channel TO-220FP-3 Single FETs, MOSFETs RoHS

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