Infineon · FETs & Power MOSFETs · MPN IPA65R190E6XKSA1
No reviews yet — be the first to review Infineon IPA65R190E6XKSA1.
| Gate Charge(Qg) | 73nC@10V |
|---|---|
| Drain to Source Voltage | 650V |
| Output Capacitance(Coss) | 98pF |
| Current - Continuous Drain(Id) | 20.2A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Pd - Power Dissipation | 34W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 190mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.62nF |
| Type | - |
N-Channel 650V 20.2A 34W Through Hole TO-220F(TO-220IS)