Infineon · FETs & Power MOSFETs · MPN IPA65R190C7XKSA1
No reviews yet — be the first to review Infineon IPA65R190C7XKSA1.
| Configuration | - |
|---|---|
| Gate Charge(Qg) | 23nC@10V |
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 8A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Pd - Power Dissipation | 30W |
| Reverse Transfer Capacitance (Crss@Vds) | 17pF |
| RDS(on) | 168mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.15nF |
N-Channel 650V 8A 30W Through Hole TO-220-FP