Infineon · FETs & Power MOSFETs · MPN IPA65R110CFD
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| Gate Charge(Qg) | 118nC@480V |
|---|---|
| Drain to Source Voltage | 700V |
| Current - Continuous Drain(Id) | 31.2A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 277.8W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 110mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.24nF |
700V 31.2A 277.8W Through Hole TO-220FP-3