Infineon IPA65R095C7

Infineon · FETs & Power MOSFETs · MPN IPA65R095C7

No reviews yet — be the first to review Infineon IPA65R095C7.

Specifications

Gate Charge(Qg)45nC@400V
Drain to Source Voltage650V
Current - Continuous Drain(Id)8A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3.5V
Pd - Power Dissipation34W
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)95mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.14nF

Technical details

650V 8A 3.5V 34W 95mΩ@10V 1 N-channel TO-220 Single FETs, MOSFETs RoHS

Related FETs & Power MOSFETs