Infineon IPA60R460CE

Infineon · FETs & Power MOSFETs · MPN IPA60R460CE

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Specifications

Gate Charge(Qg)28nC@10V
Drain to Source Voltage650V
Current - Continuous Drain(Id)13.1A
Operating Temperature --40℃~+150℃
Gate Threshold Voltage (Vgs(th))3.5V
Pd - Power Dissipation30W
Reverse Transfer Capacitance (Crss@Vds)121pF
RDS(on)460mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)620pF

Technical details

650V 13.1A 30W Through Hole TO-220FP

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