Infineon IPA60R360P7S

Infineon · FETs & Power MOSFETs · MPN IPA60R360P7S

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Specifications

Gate Charge(Qg)13nC@10V
Drain to Source Voltage650V
Current - Continuous Drain(Id)26A
Operating Temperature --40℃~+150℃
Gate Threshold Voltage (Vgs(th))3.5V
Pd - Power Dissipation22W
Reverse Transfer Capacitance (Crss@Vds)214pF
RDS(on)360mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)555pF

Technical details

N-Channel 650V 26A 22W Through Hole TO-220FP

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