Infineon IPA60R299CPXK

Infineon · FETs & Power MOSFETs · MPN IPA60R299CPXK

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Specifications

Drain to Source Voltage600V
Gate Charge(Qg)22nC@10V
Output Capacitance(Coss)60pF
Current - Continuous Drain(Id)11A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3.5V
Pd - Power Dissipation33W
RDS(on)299mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.1nF
TypeN-Channel

Technical details

600V 11A 3.5V 33W 299mΩ@10V 1 N-channel N-Channel TO-220-3-31 Single FETs, MOSFETs RoHS

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