Infineon IPA60R1K0CE

Infineon · FETs & Power MOSFETs · MPN IPA60R1K0CE

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Specifications

Gate Charge(Qg)13nC@10V
Drain to Source Voltage-
Current - Continuous Drain(Id)6.8A
Operating Temperature --40℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation61W
Reverse Transfer Capacitance (Crss@Vds)21pF
RDS(on)-
Number1 N-channel
Input Capacitance(Ciss)280pF

Technical details

6.8A 3V 61W 1 N-channel TO-220FP-3 Single FETs, MOSFETs RoHS

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