Infineon · FETs & Power MOSFETs · MPN IPA60R190E6
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| Gate Charge(Qg) | 63nC |
|---|---|
| Drain to Source Voltage | 600V |
| Output Capacitance(Coss) | 85pF |
| Current - Continuous Drain(Id) | 20.2A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 34W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 170mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.4nF |
600V 20.2A 3V 34W 170mΩ@10V 1 N-channel TO-220FP-3 Single FETs, MOSFETs RoHS