Infineon IPA60R180P7S

Infineon · FETs & Power MOSFETs · MPN IPA60R180P7S

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Specifications

Gate Charge(Qg)25nC@10V
Drain to Source Voltage600V
Output Capacitance(Coss)19pF
Current - Continuous Drain(Id)18A
Operating Temperature --40℃~+150℃
Gate Threshold Voltage (Vgs(th))3.5V
Pd - Power Dissipation26W
Reverse Transfer Capacitance (Crss@Vds)381pF
RDS(on)145mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.081nF

Technical details

N-Channel 600V 18A 26W Through Hole TO-220FP-3

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