Infineon IPA50R800CE

Infineon · FETs & Power MOSFETs · MPN IPA50R800CE

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Specifications

Gate Charge(Qg)12.4nC@10V
Drain to Source Voltage550V
Current - Continuous Drain(Id)7.6A
Operating Temperature --40℃~+150℃
Gate Threshold Voltage (Vgs(th))3.5V
Pd - Power Dissipation26.4W
Reverse Transfer Capacitance (Crss@Vds)67pF
RDS(on)800mΩ@13V
Number1 N-channel
Input Capacitance(Ciss)280pF

Technical details

550V 7.6A 26.4W Through Hole TO-220F

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