Infineon IPA50R500CE

Infineon · FETs & Power MOSFETs · MPN IPA50R500CE

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Specifications

Gate Charge(Qg)18.7nC@13V
Drain to Source Voltage500V
Current - Continuous Drain(Id)11.1A
Operating Temperature --40℃~+150℃
Gate Threshold Voltage (Vgs(th))3.5V
Pd - Power Dissipation28W
Reverse Transfer Capacitance (Crss@Vds)100pF
RDS(on)500mΩ@13V
Number1 N-channel
Input Capacitance(Ciss)433pF

Technical details

500V 11.1A 28W Through Hole TO-220F

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