Infineon · FETs & Power MOSFETs · MPN IPA50R299CP
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| Gate Charge(Qg) | 31nC@10V |
|---|---|
| Drain to Source Voltage | 500V |
| Output Capacitance(Coss) | 53pF |
| Current - Continuous Drain(Id) | 12A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Pd - Power Dissipation | 104W |
| Reverse Transfer Capacitance (Crss@Vds) | 7pF |
| RDS(on) | 299mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.19nF |
500V 12A 3.5V 104W 299mΩ@10V 1 N-channel TO-220-3-31 Single FETs, MOSFETs RoHS