Infineon · FETs & Power MOSFETs · MPN IPA50R190CE
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| Gate Charge(Qg) | 47.2nC@10V |
|---|---|
| Drain to Source Voltage | 550V |
| Current - Continuous Drain(Id) | 24.8A |
| Operating Temperature - | -40℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Pd - Power Dissipation | 32W |
| Reverse Transfer Capacitance (Crss@Vds) | 251pF |
| RDS(on) | 190mΩ@13V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.137nF |
550V 24.8A 32W Through Hole TO-220F