Infineon IPA50R190CE

Infineon · FETs & Power MOSFETs · MPN IPA50R190CE

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Specifications

Gate Charge(Qg)47.2nC@10V
Drain to Source Voltage550V
Current - Continuous Drain(Id)24.8A
Operating Temperature --40℃~+150℃
Gate Threshold Voltage (Vgs(th))3.5V
Pd - Power Dissipation32W
Reverse Transfer Capacitance (Crss@Vds)251pF
RDS(on)190mΩ@13V
Number1 N-channel
Input Capacitance(Ciss)1.137nF

Technical details

550V 24.8A 32W Through Hole TO-220F

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