Infineon · FETs & Power MOSFETs · MPN IPA180N10N3 G
No reviews yet — be the first to review Infineon IPA180N10N3 G.
| Gate Charge(Qg) | 25nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 28A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Pd - Power Dissipation | 30W |
| Reverse Transfer Capacitance (Crss@Vds) | 315pF |
| RDS(on) | 18mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.8nF |
100V 28A 3.5V 30W 18mΩ@10V 1 N-channel TO-220FP Single FETs, MOSFETs RoHS