Infineon · FETs & Power MOSFETs · MPN IPA083N10NM5S
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| Gate Charge(Qg) | 30nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 50A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.8V |
| Pd - Power Dissipation | 36W |
| Reverse Transfer Capacitance (Crss@Vds) | 16pF |
| RDS(on) | 8.3mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.7nF |
100V 50A 3.8V 36W 8.3mΩ@10V 1 N-channel TO-220FP-3 Single FETs, MOSFETs RoHS