Infineon · FETs & Power MOSFETs · MPN IPA045N10N3 G
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| Gate Charge(Qg) | 117nC@50V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 64A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Pd - Power Dissipation | 39W |
| Reverse Transfer Capacitance (Crss@Vds) | 41pF |
| RDS(on) | 4.5mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 8.41nF |
N-Channel 100V 64A 39W Through Hole TO-220FP