Infineon IPA029N06N

Infineon · FETs & Power MOSFETs · MPN IPA029N06N

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Specifications

Gate Charge(Qg)66nC
Drain to Source Voltage60V
Current - Continuous Drain(Id)84A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3.3V
Pd - Power Dissipation38W
Reverse Transfer Capacitance (Crss@Vds)78pF
RDS(on)2.9mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)5.125nF

Technical details

N-Channel 60V 84A 38W Through Hole TO-220FP

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