Infineon · FETs & Power MOSFETs · MPN IP165R660CFD
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| Drain to Source Voltage | 650V |
|---|---|
| Gate Charge(Qg) | 22nC@10V |
| Output Capacitance(Coss) | 33pF |
| Current - Continuous Drain(Id) | 6A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.5V |
| RDS(on) | 660mΩ@10V |
| Input Capacitance(Ciss) | 615pF |
650V 6A 4.5V 660mΩ@10V Single FETs, MOSFETs RoHS