Infineon IMZC120R017M2HXKSA1

Infineon · FETs & Power MOSFETs · MPN IMZC120R017M2HXKSA1

No reviews yet — be the first to review Infineon IMZC120R017M2HXKSA1.

Specifications

Drain to Source Voltage1.2kV
Gate Charge(Qg)89nC
Current - Continuous Drain(Id)97A
Output Capacitance(Coss)126pF
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))5.1V
Pd - Power Dissipation382W
Reverse Transfer Capacitance (Crss@Vds)11pF
RDS(on)17mΩ
Number1 N-channel
Input Capacitance(Ciss)2.91nF
TypeN-Channel

Technical details

1.2kV 97A 5.1V 382W 17mΩ 1 N-channel N-Channel TO-247-4 Single FETs, MOSFETs RoHS

Related FETs & Power MOSFETs