Infineon · FETs & Power MOSFETs · MPN IMZA75R016M1HXKSA1
No reviews yet — be the first to review Infineon IMZA75R016M1HXKSA1.
| Gate Charge(Qg) | 81nC |
|---|---|
| Drain to Source Voltage | 750V |
| Output Capacitance(Coss) | 236pF |
| Current - Continuous Drain(Id) | 89A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 5.6V |
| Pd - Power Dissipation | 319W |
| Reverse Transfer Capacitance (Crss@Vds) | 17pF |
| RDS(on) | 22mΩ |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.869nF |
| Type | N-Channel |
750V 89A 5.6V 319W 22mΩ 1 N-channel N-Channel TO-247-4 Single FETs, MOSFETs RoHS