Infineon · FETs & Power MOSFETs · MPN IMZA65R083M1HXKSA1
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| Gate Charge(Qg) | 19nC@18V |
|---|---|
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 26A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 5.7V |
| Pd - Power Dissipation | 104W |
| RDS(on) | 111mΩ@18V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 624pF |
650V 26A 5.7V 104W 111mΩ@18V 1 N-channel TO-247-4 Single FETs, MOSFETs RoHS