Infineon · FETs & Power MOSFETs · MPN IMZA65R072M1HXKSA1
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| Gate Charge(Qg) | 22nC |
|---|---|
| Drain to Source Voltage | 650V |
| Output Capacitance(Coss) | 112pF |
| Current - Continuous Drain(Id) | 28A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 5.7V |
| Pd - Power Dissipation | 96W |
| Reverse Transfer Capacitance (Crss@Vds) | 9pF |
| RDS(on) | 94mΩ |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 744pF |
| Type | N-Channel |
650V 28A 5.7V 96W 94mΩ 1 N-channel N-Channel TO-247-4 Single FETs, MOSFETs RoHS