Infineon · FETs & Power MOSFETs · MPN IMZA65R048M1H
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| Gate Charge(Qg) | 33nC |
|---|---|
| Configuration | - |
| Drain to Source Voltage | 650V |
| Output Capacitance(Coss) | 168pF |
| Current - Continuous Drain(Id) | 39A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.5V |
| Pd - Power Dissipation | 125W |
| RDS(on) | 48mΩ@18V |
| Reverse Transfer Capacitance (Crss@Vds) | 13pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.118nF |
N-Channel 650V 125W Through Hole TO-247-4