Infineon · FETs & Power MOSFETs · MPN IMZA65R040M2HXKSA1
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| Configuration | Half-Bridge |
|---|---|
| Gate Charge(Qg) | 28nC |
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 46A |
| Output Capacitance(Coss) | 96pF |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 5.6V |
| Pd - Power Dissipation | 172W |
| Reverse Transfer Capacitance (Crss@Vds) | 5.8pF |
| RDS(on) | 49mΩ |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 997pF |
650V 46A 5.6V 172W 49mΩ 1 N-channel N-Channel TO-247-4 Single FETs, MOSFETs RoHS