Infineon IMZA65R033M2HXKSA1

Infineon · FETs & Power MOSFETs · MPN IMZA65R033M2HXKSA1

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Specifications

Configuration-
Gate Charge(Qg)34nC
Drain to Source Voltage-
Output Capacitance(Coss)-
Current - Continuous Drain(Id)-
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))5.6V
Pd - Power Dissipation194W
RDS(on)41mΩ
Reverse Transfer Capacitance (Crss@Vds)-
Number-
Input Capacitance(Ciss)-

Technical details

5.6V 194W 41mΩ TO-247-4 Single FETs, MOSFETs RoHS

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