Infineon · FETs & Power MOSFETs · MPN IMZA65R010M2HXKSA1
No reviews yet — be the first to review Infineon IMZA65R010M2HXKSA1.
| Configuration | Half-Bridge |
|---|---|
| Gate Charge(Qg) | 112nC |
| Drain to Source Voltage | 650V |
| Output Capacitance(Coss) | 297pF |
| Current - Continuous Drain(Id) | 144A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 5.6V |
| Pd - Power Dissipation | 440W |
| Reverse Transfer Capacitance (Crss@Vds) | 22pF |
| RDS(on) | 13.1mΩ |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 4.001nF |
650V 144A 440W Through Hole TO-247-4