Infineon · FETs & Power MOSFETs · MPN IMZA65R007M2HXKSA1
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| Configuration | Half-Bridge |
|---|---|
| Drain to Source Voltage | 650V |
| Gate Charge(Qg) | 179nC |
| Current - Continuous Drain(Id) | 210A |
| Output Capacitance(Coss) | 613pF |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 5.6V |
| Pd - Power Dissipation | 625W |
| RDS(on) | 8.5mΩ |
| Reverse Transfer Capacitance (Crss@Vds) | 35pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 6.359nF |
650V 210A 5.6V 625W 8.5mΩ 1 N-channel N-Channel TO-247-4 Single FETs, MOSFETs RoHS