Infineon IMZA120R026M2HXKSA1

Infineon · FETs & Power MOSFETs · MPN IMZA120R026M2HXKSA1

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Specifications

Configuration-
Gate Charge(Qg)60nC
Drain to Source Voltage1.2kV
Current - Continuous Drain(Id)69A
Output Capacitance(Coss)85pF
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))5.1V
Pd - Power Dissipation289W
Reverse Transfer Capacitance (Crss@Vds)7pF
RDS(on)34mΩ
Number1 N-channel
Input Capacitance(Ciss)1.99nF

Technical details

1.2kV 69A 5.1V 289W 34mΩ 1 N-channel N-Channel TO-247-4 Single FETs, MOSFETs RoHS

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