Infineon · FETs & Power MOSFETs · MPN IMZA120R022M2HXKSA1
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| Configuration | - |
|---|---|
| Gate Charge(Qg) | 71nC |
| Drain to Source Voltage | 1.2kV |
| Output Capacitance(Coss) | 100pF |
| Current - Continuous Drain(Id) | 80A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 5.1V |
| Pd - Power Dissipation | 329W |
| RDS(on) | 29mΩ |
| Reverse Transfer Capacitance (Crss@Vds) | 9pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.33nF |
1.2kV 80A 5.1V 329W 29mΩ 1 N-channel N-Channel TO-247-4 Single FETs, MOSFETs RoHS