Infineon IMZA120R020M1HXKSA1

Infineon · FETs & Power MOSFETs · MPN IMZA120R020M1HXKSA1

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Specifications

Gate Charge(Qg)27.1nC
Configuration-
Drain to Source Voltage1.2kV
Current - Continuous Drain(Id)98A
Output Capacitance(Coss)159pF
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4.2V
Pd - Power Dissipation375W
RDS(on)19mΩ@18V
Reverse Transfer Capacitance (Crss@Vds)23pF
Number1 N-channel
Input Capacitance(Ciss)3.46nF

Technical details

N-Channel 1.2kV 98A 375W Through Hole TO-247-4

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