Infineon · FETs & Power MOSFETs · MPN IMZA120R007M1HXKSA1
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| Gate Charge(Qg) | 289nC |
|---|---|
| Configuration | - |
| Drain to Source Voltage | 1.2kV |
| Output Capacitance(Coss) | 61pF |
| Current - Continuous Drain(Id) | 225A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.6V |
| Pd - Power Dissipation | 750W |
| RDS(on) | 7mΩ@18V |
| Reverse Transfer Capacitance (Crss@Vds) | 420pF |
| Input Capacitance(Ciss) | 9.17nF |
| Type | N-Channel |
1.2kV 225A 3.6V 750W 7mΩ@18V N-Channel TO-247-4 Single FETs, MOSFETs RoHS