Infineon IMZ120R030M1HXKSA1

Infineon · FETs & Power MOSFETs · MPN IMZ120R030M1HXKSA1

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Specifications

Gate Charge(Qg)63nC
Drain to Source Voltage1.2kV
Output Capacitance(Coss)116pF
Current - Continuous Drain(Id)56A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))5.7V
Pd - Power Dissipation227W
Reverse Transfer Capacitance (Crss@Vds)13pF
RDS(on)30mΩ
Number1 N-channel
Input Capacitance(Ciss)2.12nF
TypeN-Channel

Technical details

N-Channel 1.2kV 56A 227W Through Hole TO-247-4-1

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