Infineon · FETs & Power MOSFETs · MPN IMYH200R100M1HXKSA1
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| Drain to Source Voltage | 2kV |
|---|---|
| Gate Charge(Qg) | 55nC |
| Current - Continuous Drain(Id) | 26A |
| Output Capacitance(Coss) | 40pF |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 5.5V |
| Pd - Power Dissipation | 217W |
| RDS(on) | 131mΩ |
| Reverse Transfer Capacitance (Crss@Vds) | 3pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.215nF |
| Type | N-Channel |
2kV 26A 5.5V 217W 131mΩ 1 N-channel N-Channel TO-247-4 Single FETs, MOSFETs RoHS