Infineon · FETs & Power MOSFETs · MPN IMYH200R075M1HXKSA1
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| Drain to Source Voltage | 2kV |
|---|---|
| Gate Charge(Qg) | 64nC |
| Current - Continuous Drain(Id) | 34A |
| Output Capacitance(Coss) | 53pF |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 5.5V |
| Pd - Power Dissipation | 267W |
| Reverse Transfer Capacitance (Crss@Vds) | 4pF |
| RDS(on) | 98mΩ |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.6nF |
| Type | N-Channel |
2kV 34A 5.5V 267W 98mΩ 1 N-channel N-Channel TO-247-4 Single FETs, MOSFETs RoHS