Infineon · FETs & Power MOSFETs · MPN IMYH200R050M1HXKSA1
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| Gate Charge(Qg) | 82nC |
|---|---|
| Drain to Source Voltage | 2kV |
| Output Capacitance(Coss) | 81pF |
| Current - Continuous Drain(Id) | 48A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.5V |
| Pd - Power Dissipation | 348W |
| Reverse Transfer Capacitance (Crss@Vds) | 5pF |
| RDS(on) | 50mΩ |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.425nF |
| Type | N-Channel |
2kV 48A 4.5V 348W 50mΩ 1 N-channel N-Channel TO-247-4 Single FETs, MOSFETs RoHS