Infineon · FETs & Power MOSFETs · MPN IMYH200R012M1HXKSA1
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| Drain to Source Voltage | 2kV |
|---|---|
| Output Capacitance(Coss) | 322pF |
| Current - Continuous Drain(Id) | 123A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 5.5V |
| Pd - Power Dissipation | 552W |
| RDS(on) | 16.5mΩ@18V |
| Reverse Transfer Capacitance (Crss@Vds) | 22pF |
| Input Capacitance(Ciss) | 9.7nF |
2kV 123A 5.5V 552W 16.5mΩ@18V Single FETs, MOSFETs RoHS